Make: Elettrorava s.p.a, Italy

Salient Features:

• Physical vapor deposition technique.
• Growth of thin films/ nanostructure is possible in Ar, O₂, and N₂ atmosphere.
• Fine control over thin film growth is possible (+/-1% uniformity on a 3” wafer).
• Low pressure deposition (10^-4 mBar), chamber background pressure is 1×10^-8 mBar.
• Enhanced adhesion and microstructure control.
• Independent control of ion beam parameters allows user to engineer film for desired properties.
• High-quality growth at room temperature to up to 1000^oC is possible.
• Can be used for dry etching/patterning, and in-situ annealing purposes.

Materials can be deposited:

• Dielectrics (TiO₂, SiO₂, Si₃N₄,Y₂O₃, HfO₂, ZrO₂, ITO, FTO etc.)
• Metals (Au, Ag, Pt, Al, Ti etc.)
• Semiconductors (Si-Ge, GaN, AlGaN, ZnO, PbTe, PbSe, MgZnO, CdZnO, CIGS, CdS etc.)

Collimated RF Ion Source under Operation

Kaufman and Robinson Ion Source

DIBSD Operation

DIBSD chamber with automated loadlock, heating assembly, UHV pumps, chiller, and gas cylinders