Bandgap tayloring had been an important game in semiconductors since a long time. The science of tayloring is being looked at universally with greater care to target more intelligent tayloring. How the crystal field changes with the introduction of a foriegn element is of great interest in the scientific community. Our contibution is an addition to the great effort.
The field of ferromagnetism in dilute magnetic semiconductors (DMSs) and dilute magnetic oxides (DMOs) has developed into an important branch of materials science. Stimulated by demonstrations of outstanding low-temperature functionalities such as spin injection, the control of magnetism by means of electric fields and electric currents, tunnelling anisotropic magnetoresistance in planar junctions and in the Coulomb blockade regime, and current-induced domain displacement without the assistance of a magnetic field, the field is at its most interesting stage. These findings have brought into focus the interplay of magnetization texture and dynamics with carrier population and currents, which is a broad topic of current research on spintronic materials.
One of the ways scientists are trying to generate multiferroicity is by starting with a strong ferroelectric material and thereby doping it with well known elements with magnetic properties. The introduction of a foreign element no doubt reduces the strength of the ferroelectric properties yet raises the possibility of a magneto-electric coupling between the ferroelectric component and the magnetic component. One such ferroelectric material known in literature is PbTiO3 and it is the strongest amongst other perovskite titante ABO3 compounds. A venture of producing PbTi/NiO3 is being made and hence find out what properties of magnetism can be envisaged though such a venture.