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INDIAN INSTITUTE OF TECHNOLOGY INDORE
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HYBRID NANODEVICE RESEARCH
GROUP
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Research Facilities
Dual ion beam sputtering (DIBS) system to deposit:
Inorganic oxides/nitrides/dielectrics (SiO2, TiO2, Si3N4, ZrO2, ITO, HfO2 etc.);
Metals (Au, Ti, Al, Pt etc.);
Semiconductors (ZnO etc.)
Four Probe Hall Measurement System:
To measure: carrier concentration, type of doping, carrier mobility
Gas and VOC Sensor Set-up:
Resistive and capacitive sensitivity measurement set-up
Rapid Thermal Processing (RTP):
Rapid thermal annealing under various gas atmoshphere
De-ionized Water:
Remove particulates > 0.5 micron, ions, organics and bacteria
Conductivity upto 1 uS/cm
Spin Coater:
Thin-film deposition technique in which material is grown by sol-gel and hydrothermal method
Convection Oven:
Temperature range: Upto 300 oC
Fumehood with Blower:
To perform: Wet chemical processing
Keithley 4200A-SCS Parameter Analyzer:
The Semiconductor parametric analyzer, delivers synchronizing current-voltage (I-V), capacitance-voltage (C-V) and ultra-fast pulsed I-V measurements
Electrochemical Synthesis:
Electrochemical current-voltage measurement set-up
Annealing Furnace:
To perform: Annealing (up to 1000 oC) under vacuum or gas atmosphere
Variable-angle, Variable-wavelength Spectroscopic Ellipsometry:
To measure: transmission, reflection, thickness, optical properties of materials
Solar Simulator System:
To measure: VOC, ISC and PCE of solar cells at different temperature
Quantum Efficiency Measurement System:
To measure: A monolithic, turnkey solution for photovoltaic material and device spectral characterization including EQE and IQE
Cryogenic Vacuum Probe Station:
To measure: Device characteristics at different ambient conditions
Computational Work Station:
Device simulation such as Density Functional Theory, MOSFET, BJT, OFET, LED, Quantum well, Solar Cell, TFT, OTFT, OLED