A method of fabricating high two dimensional electron gas density yielding zinc oxide heterostructure
Inventors: Shaibal Mukherjee, Abhinav Kranti, Md Arif Khan and Rohit Singh Patent Application No. 201721010866, March 27, 2017 (Status: Filed).
A method of fabricating zinc oxide based heterostructure for high electron mobility transistor
Inventors: Shaibal Mukherjee, Abhinav Kranti, Rohit Singh and Md Arif Khan Patent Application No. 201721007309, March 1, 2017 (Status: Filed).
Dual ion beam sputtered cost-effective and non-volatile resistive memory devices
Inventors: Shaibal Mukherjee and Amitesh Kumar Patent Application No. 201621020046, June 11, 2016 (Status: Published).