A method of fabricating high two dimensional electron gas density yielding zinc oxide heterostructure
Inventors: Shaibal Mukherjee, Abhinav Kranti, Md Arif Khan and Rohit Singh Patent No. 201721010866, PUBLISHED, September 28, 2018.
A method of fabricating zinc oxide based heterostructure for high electron mobility transistor
Inventors: Shaibal Mukherjee, Abhinav Kranti, Rohit Singh and Md Arif Khan Patent No. 201721007309, PUBLISHED, September 7, 2018.
Dual ion beam sputtered cost-effective and non-volatile resistive memory devices
Inventors: Shaibal Mukherjee and Amitesh Kumar Patent No. 201621020046, PUBLISHED, December 15, 2017.