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INDIAN INSTITUTE OF TECHNOLOGY INDORE
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HYBRID NANODEVICE RESEARCH
GROUP
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PATENTS
  1. A method of fabricating high two dimensional electron gas density yielding zinc oxide heterostructure
    Inventors: Shaibal Mukherjee, Abhinav Kranti, Md Arif Khan and Rohit Singh
    Patent No. 201721010866, PUBLISHED, September 28, 2018.

  2. A method of fabricating zinc oxide based heterostructure for high electron mobility transistor
    Inventors: Shaibal Mukherjee, Abhinav Kranti, Rohit Singh and Md Arif Khan
    Patent No. 201721007309, PUBLISHED, September 7, 2018.

  3. Dual ion beam sputtered cost-effective and non-volatile resistive memory devices
    Inventors: Shaibal Mukherjee and Amitesh Kumar
    Patent No. 201621020046, PUBLISHED, December 15, 2017.